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New PDF release: Automated reasoning about classical mechanics (MS thesis)

By Wong L.C.W.

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Furthermore, it has also been shown that the TL current is given by, I (φ ) = = §q · sin ¨ e φ ¸ , qe L © = ¹ (29) which implies that it becomes an oscillatory function of the magnetic flux. Since no applied forcing function was assumed, (29) leads to the important observation [62] that a TL in the discrete charge regime will, in the presence of a magnetic flux, exhibit persistent currents [59]. These are currents without dissipation, such as the atomic orbital currents that elicit orbital magnetism.

The feature size for patterns thus created may be as small as 10 nm [34]. 3 Molecular Beam Epitaxy The engineering of modern semiconductor device structures relies on the appropriate introduction and distribution of impurities via doping, together with band-gap engineering to effect electron confinement along the direction of transport [34-37]. This latter gives rise to devices in which tunneling phenomena becomes manifest. The key to these types of structures is the technique for depositing down to mono-atomic-thick layers called molecular beam epitaxy (MBE).

The process proceeds at room temperature, can produce selectivities of 200:1 in standard PR masks, 300:1 in hard masks such as SiO2 and Si3N4, and exhibits etching rates of 6µm / sec [30]. As a result of this process, the walls of the etched trenches exhibit a scalloping structure, see Figure 117(b). The application of DRIE requires acquiring the DRIE equipment. An alternative to DRIE for better than conventional bulk micromachining, but not as expensive as DRIE, is presented next. 4 Single Crystal Silicon Reactive Etch and Metal (SCREAM) Similar to DRIE, the single crystal silicon reactive etch and metal (SCREAM I) process effects bulk micromachining using plasma and reactive ion etching (RIE) [33], see Fig.

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Automated reasoning about classical mechanics (MS thesis) by Wong L.C.W.

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